 |
|
| If you can't view the Datasheet, Please click here to try to view without PDF Reader . |
|
|
|
| If you can't view the Datasheet, Please click here to try to view without PDF Reader . |
|
|
| Datasheet File OCR Text: |
| LESHAN RADIO COMPANY, LTD. General Purpose Transistors FEATURE High Voltage: VCEO = -50 V. Epitaxial planar type. NPN complement: L2SC1623 Pb-Free Package is available. 1 2 3 L2SA812*LT1 www..com DEVICE MARKING AND ORDERING INFORMATION Device L2SA812QLT1 L2SA812QLT1G L2SA812RLT1 L2SA812RLT1G L2SA812SLT1 L2SA812SLT1G Marking M8 M8 (Pb-Free) M6 M6 (Pb-Free) M7 M7 (Pb-Free) Shipping 3000/Tape&Reel 3000/Tape&Reel 3000/Tape&Reel 3000/Tape&Reel 3000/Tape&Reel 3000/Tape&Reel 1 BASE SOT-23 3 COLLECTOR 2 EMITTER MAXIMUM RATINGS Rating Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector current-continuoun Symbol VCEO VCBO VEBO IC L2SA812 -50 -60 -6 -150 Unit V V V mAdc THERMAL CHARATEERISTICS Characteristic Total Device Dissipation FR-5 Board, (1) TA=25 C Derate above 25 C Thermal Resistance, Junction to Ambient Total Device Dissipation Alumina Substrate, (2) TA=25 C Derate above 25 C Thermal Resistance, Junction to Ambient Junction and Storage Temperature R JA o o Symbol PD Max Unit o 200 o mW mW/oC o 1.8 R JA 556 C/W PD 200 2.4 417 -55 to +150 Tj ,Tstg o mW mW/oC C/W o C L2SA812-1/5 LESHAN RADIO COMPANY, LTD. L2SA812*LT1 ELECTRICAL CHARACTERISTICS (TA=25oC unless otherwise noted) Characteristic Symbol V(BR)CEO V(BR)EBO V(BR)CBO Min -50 -6 -60 Typ - Max - Unit V V V OFF CHARACTERISTICS Collector-Emitter Breakdown Voltage (IC=-1mA) Emitter-Base Breakdown Voltage www..com (IE=-50 ) Collector-Base Breakdown Voltage (IC=-50 A) Collector Cutoff Current (VCB=-50V) Emitter Cutoff Current (VBE=-6V) ICBO IEBO - - -0.1 -0.1 A A ON CHARACTERISTICS DC Current Gain (IC=-1mA,VCE=-6.0V) Collector-Emitter Saturation Voltage (IC=-100mA,IB=-10mA) Base -Emitter On Voltage IE=-1.0mA,VCE=-6.0V) hFE 120 560 VCE(sat) VBE -0.58 -0.18 -0.62 -0.3 -0.68 V V SMALL-SIGNAL CHARACTERISTICS Current-Gain-Bandwidth Product (VCE=-6.0V,IE =-10mA) Output Capacitance(VCE = -10V, IE=0, f=1.0MHz) hFE Values are classified as followes Ft Cobo - 180 4.5 - MHz pF NOTE: * hFE Q 120~270 R 180~390 S 270~560 L2SA812-2/5 LESHAN RADIO COMPANY, LTD. L2SA812*LT1 Fig.1 Grounded emitter propagation characteristics -50 Fig.2 Grounded emitter output characteristics( ) -10 -35.0 T A = 25C -31.5 -28.0 -24.5 -20 I C, COLLECTOR CURRENT (mA) I C, COLLECTOR CURRENT (mA) T A = 100C 25C - 40C VCE= -10 V -8 -10 -50 -6 -21.0 -17.5 www..com -2 -1 -4 -14.0 -10.5 -0.5 -2 -7.0 -3.5A -0.2 -0.1 -0.2 -0.4 -0.6 -0.8 -1.0 -1.2 -1.4 -1.6 0 0 -0.4 -0.8 -1.2 -1.6 I B =0 -2.0 V BE , BASE TO EMITTER VOLTAGE(V) V CE , COLLECTOR TO EMITTER VOLTAGE (V) Fig.3 Grounded emitter output characteristics( ) -100 Fig.4 DC current gain vs. collector current ( ) 500 T A = 25C I C, COLLECTOR CURRENT (mA) -80 T A = 25C h FE, DC CURRENT GAIN -60 500 450 400 350 300 VCE= -5 V -3V -1V 200 -250 -200 -40 -150 -100 100 -20 -50 A I B =0 0 -1 -2 -3 -4 -5 50 0 -0.2 -0.5 -1 -2 -5 -10 -20 -50 -100 V CE , COLLECTOR TO EMITTER VOLTAGE (V) I C, COLLECTOR CURRENT (mA) Fig.5 DC current gain vs. collector current ( ) V CE(sat), COLLECTOR SATURATION VOLTAGE(V) Fig.6 Collector-emitter saturation voltage vs. collector current ( ) 500 -1 T A = 100C 25C T A = 25C -0.5 h FE, DC CURRENT GAIN -40C 200 -0.2 I C /I B = 50 -0.1 100 20 10 50 -0.05 VCE= - 6V -0.2 -0.5 -1 -2 -5 -10 -20 -50 -100 -0.2 -0.5 -1 -2 -5 -10 -20 -50 -100 I C, COLLECTOR CURRENT (mA) I C, COLLECTOR CURRENT (mA) L2SA812-3/5 LESHAN RADIO COMPANY, LTD. L2SA812*LT1 Fig.7 Collector-emitter saturation voltage vs. collector current ( ) V CE(sat), COLLECTOR SATURATION VOLTAGE(V) -1 Fig.8 Gain bandwidth product vs. emitter current 1000 I C /I B = 10 f r , TRANSITION FREQUENCY(MHz) 500 T A = 25C V CE = -12V www..com -0.5 -0.2 200 -0.1 T A = 100C 25C -40C 100 -0.05 50 -0.2 -0.5 -1 -2 -5 -10 -20 -50 -100 -0.2 -0.5 -1 -2 -5 -10 -20 -50 -100 I C, COLLECTOR CURRENT (mA) I E, EMITTER CURRENT (mA) Fig.9 Collector output capacitance vs.collector-base voltage Emitter inputcapacitance vs. emitter-base voltage C ob , COLLECTOR OUTPUT CAPACITANCE( pF) C ib , EMITTER INPUT CAPACITANCE (pF) 20 C ib 10 T A = 25C f =1MHz I E = 0A I C = 0A C ob 5 2 -0.5 -1 -2 -5 -10 -20 V CB, COLLECTOR TO BASE VOLTAGE (V) V EB, EMITTER TO BASE VOLTAGE (V) L2SA812-4/5 LESHAN RADIO COMPANY, LTD. L2SA812*LT1 SOT-23 NOTES: www..com A L 3 1 2 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. BS DIM A B C D G H J K L S V V G C D H K J INCHES MIN MAX 0.1102 0.1197 0.0472 0.0551 0.0350 0.0440 0.0150 0.0200 0.0701 0.0807 0.0005 0.0040 0.0034 0.0070 0.0140 0.0285 0.0350 0.0401 0.0830 0.1039 0.0177 0.0236 MILLIMETERS MIN MAX 2.80 3.04 1.20 1.40 0.89 1.11 0.37 0.50 1.78 2.04 0.013 0.100 0.085 0.177 0.35 0.69 0.89 1.02 2.10 2.64 0.45 0.60 PIN 1. BASE 2. EMITTER 3. COLLECTOR 0.037 0.95 0.037 0.95 0.079 2.0 0.035 0.9 0.031 0.8 inches mm L2SA812-5/5 |
Price & Availability of L2SA812XLT1
 |
|
|
|
|
All Rights Reserved © IC-ON-LINE 2003 - 2022 |
| [Add Bookmark] [Contact Us] [Link exchange] [Privacy policy] |
|
Mirror Sites : [www.datasheet.hk]
[www.maxim4u.com] [www.ic-on-line.cn]
[www.ic-on-line.com] [www.ic-on-line.net]
[www.alldatasheet.com.cn]
[www.gdcy.com]
[www.gdcy.net] |